Hydrogen-Induced Changes of Flatband Voltage and Light Emission Intensity in MOS Capacitors Containing Si Nanocrystals: Defect-Related Light Emission

초록

Atomic hydrogen (H) exposure of metal-oxide-semiconductor (MOS) capacitors containing Si nanocrystals was performed and shown to result in a shift in the flatband voltage (V(FB)) to a more positive gate voltage, in an increase in the photoluminescence (PL) intensity with increasing exposure time, and then a restoration due to subsequent thermal annealing. It is evident that the reversible V(FB) shift is a likely consequence of H passivation and depassivation of defects at the Si nanlcrystal/SiO(2) interfaces. The similarity between the V(FB) and the PL changes supports the notion that the light emission from Si nanocrystals is closely associated with a defect-related luminescence mechanism.

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