Hindering the light-induced instability in a-Si:H by hydrogen clusters

초록

The effects of hydrogen clusters, relating to the hydrogen effusion peak around 350 degrees C, on the light-induced stability in hydrogenated amorphous silicon (a-Si:H) have been investigated. The hydrogen clusters were removed by increasing the temperature up to 400 degrees C with an increase rate of 12 degrees C/min. After removing the hydrogen clusters, a reduction in hydrogen content and weak Si-Si bond density was observed but the light-induced instability increased by a factor of 4 for the completely degraded state. The increase of the instability is consistent with a model of suppression of the long-range motion of atomic hydrogen by the hydrogen clusters. (C) 2000 Elsevier Science B.V. All rights reserved.

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