Optical investigation of quaternary AlxInyGa1-x-yN epilayers grown by using pulsed metalorganic chemical vapor deposition

초록

Photoluminescence (PL) and time-resolved PL measurements have been carried out in the quaternary AlxInyGa1-x-yN epilayers grown by using pulsed metalorganic chemical vapor deposition (PMOCVD). PMOCVD-grown AlInGaN layers show a strong blueshift and linewidth broadening of the emission band with excitation power density, and the PL decay time increases with decreasing emission energy. These results are characteristic of localized carrier/exciton recombination, which is beneficial for strong spontaneous emission for ultraviolet (UV) light-emitting diodes (LEDs). The obtained properties indicate that quaternary AlInGaN is a promising material for UV applications and especially that the PMOCVD process is a useful method for fabricating the active region of a deep UV LED.

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