Thermalization and time-of-flight photocurrent transients in hydrogenated amorphous silicon

초록

Time-of-flight photocurrent transients of electrons and holes in hydrogenated amorphous silicon have been investigated. The electron transients reveal a non-dispersive behavior in which the electron drift mobility is thermally activated and field-independent in the wide temperature range of 180-340 K. On the other hand, the hole transients show a dispersive behavior even above room temperature, in which the hole drift mobility is thermally activated and field-dependent. These results are analyzed by the thermalization model for a double exponential tail state distribution. © 1988.