Gaptronics: multilevel photonics applications spanning zero-nanometer limits

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13

초록

With recent advances in nanofabrication technology, various metallic gap structures with gap widths reaching a few to sub-nanometer, and even 'zero-nanometer', have been realized. At such regime, metallic gaps not only exhibit strong electromagnetic field confinement and enhancement, but also incorporate various quantum phenomena in a macroscopic scale, finding applications in ultrasensitive detection using nanosystems, enhancement of light-matter interactions in low-dimensional materials, and ultralow-power manipulation of electromagnetic waves, etc. Therefore, moving beyond nanometer to 'zero-nanometer' can greatly diversify applications of metallic gaps and may open the field of dynamic 'gaptronics.' In this paper, an overview is given on wafer-scale metallic gap structures down to zero-nanometer gap width limit. Theoretical description of metallic gaps from sub-10 to zero-nanometer limit, various wafer-scale fabrication methods and their applications are presented. With such versatility and broadband applicability spanning visible to terahertz and even microwaves, the field of 'gaptronics' can be a central building block for photochemistry, quantum optical devices, and 5/6G communications.

키워드

light-matter interaction; lithography; nanophotonics; reconfigurable metasurface; sub-nanometer; wafer-scale; zerogap; ENHANCED RAMAN-SPECTROSCOPY; TERAHERTZ QUANTUM PLASMONICS; HIGH-THROUGHPUT FABRICATION; BOSE-EINSTEIN CONDENSATION; GLANCING ANGLE DEPOSITION; SINGLE-MOLECULE; FIELD ENHANCEMENT; VISIBLE-LIGHT; CHEMICAL-REACTION; MAGNETIC-FIELD
제목
Gaptronics: multilevel photonics applications spanning zero-nanometer limits
저자
Jeong, Jeeyoon; Kim, Hyun Woo; Kim, Dai-Sik
DOI
10.1515/nanoph-2021-0798
발행일
2022-04-04
유형
Review
저널명
NANOPHOTONICS
권
11
호
7
페이지
1231 ~ 1260