Remote 플라즈마에서 위치 및 반응기체에 따른 PMMA의 식각 특성 분석

Influence of Loading Position and Reaction Gas on Etching Characteristics of PMMA in a Remote Plasma System

초록

Etching process of PMMA (Polymethyl Methacrylate) on glass surface was investigated by dry etchingtechnique using remote plasma. To determine the etching characteristics, the remote plasma etching was conducted forfrom the plasma generation was increased, the etch rate of PMMA was linearly decreased by radical density in plasma.PMMA has removed by reactive radicals in the plasma. The etch rate increased with plasma power because of morereactive radicals. The etch rate and surface roughness of PMMA increased with O2 concentration in the etchant.

키워드

Remote PlasmaPMMAEtch RateLoading Position1. . .Remote PlasmaPMMAEtch RateLoading Position1. . .
제목
Remote 플라즈마에서 위치 및 반응기체에 따른 PMMA의 식각 특성 분석
제목 (타언어)
Influence of Loading Position and Reaction Gas on Etching Characteristics of PMMA in a Remote Plasma System
저자
이원규고천광
발행일
2006-10
유형
Y
저널명
Korean Chemical Engineering Research(HWAHAK KONGHAK)
44
5
페이지
483 ~ 488