Temperature-Dependent Studies of Si-Implanted Al0.33Ga0.67N with Different Annealing Temperatures and Times

초록

Electrical activation studies were carried out on Si-implanted Al0.33Ga0.67N as a function of ion dose, annealing temperature, and annealing time. The samples were implanted at room temperature with Si ions at 200 keV in doses ranging from 1 x 10(14) cm(-2) to 1 x 10(15) cm(-2), and subsequently proximity-cap annealed from 1150A degrees C to 1350A degrees C for 20 min to 60 min in a nitrogen environment. One hundred percent electrical activation efficiency was obtained for Al0.33Ga0.67N samples implanted with a dose of 1 x 10(15) cm(-2) after annealing at either 1200A degrees C for 40 min or at 1300A degrees C for 20 min. The samples implanted with doses of 1 x 10(14) cm(-2) and 5 x 10(14) cm(-2) exhibited significant activations of 74% and 90% after annealing for 20 min at 1300A degrees C and 1350A degrees C, respectively. The mobility increased as the annealing temperature increased from 1150A degrees C to 1350A degrees C, showing peak mobilities of 80 cm(2)/V s, 64 cm(2)/V s, and 61 cm(2)/V s for doses of 1 x 10(14) cm(-2), 5 x 10(14) cm(-2), and 1 x 10(15) cm(-2), respectively. Temperature-dependent Hall-effect measurements showed that most of the implanted layers were degenerately doped. Cathodoluminescence measurements for all samples exhibited a sharp neutral donor-bound exciton peak at 4.08 eV, indicating excellent recovery of damage caused by ion implantation.

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