Synthesis of silica nanowires by PECVD at low temperature using Zn as a catalyst

초록

Amorphous silica nanowires (NWs) were simply synthesized by annealing Zn film in silicon (Si) and oxygen (O) chemical vapors produced by plasma-enhanced chemical vapor deposition (PECVD) technique with a mixture of SiH4 and N2O gases. The resulting silica NWs were shown to have a silicon-rich oxide (SiO (x) ) phase in which the oxygen composition (x value) of the SiO (x) is controlled by varying the mixing ratio of two gases. It was found that well-defined silica (SiO1.34) NWs having a mean diameter of similar to 250 nm were formed by annealing Zn film (similar to 300 nm) at 380 A degrees C for 10 min in Si and O vapors produced using a mixture of SiH4 and N2O achieved with flow rates of 200 sccm and 60 sccm, respectively. They emit light with a peak centered at 550 nm, characteristic of SiO (x) materials. It is suggested that the NWs are grown via Zn/ZnO-catalyzed vapor-solid process.

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