Characteristics of diodes prepared using epitaxial CoSi2 as a boron diffusion source

초록

The silicide-as-a-doping-source (SADS) process was used to manufacture a low leakage, shallow p+n junction. The SADS process uses epitaxial CoSi<inf>2</inf> films formed by the Co/Ti/Si system. The film exhibited very low reverse leakage current density when the silicide formation temperature was at 800 °C. The reverse leakage current density increased significantly when the temperature was increased to 900 °C.