Experimental Demonstration of Capacitive in-Memory Computing Using Ferroelectric HZO Memcapacitors

초록

Ferroelectric capacitors (Fe-Caps) exhibiting memcapacitive behavior are emerging as a compelling platform for low-power capacitive in-memory computing (IMC). Their inherently open-circuit nature suppresses static current and sneak paths, offering a distinct advantage over resistive IMC counterparts. In this work, an experimental demonstration is presented of a cross-point Fe-Cap array prototype, establishing capacitive IMC with non-destructive readout characteristics. The devices exhibit robust reliability, sustaining more than 105 read cycles and 107 write cycles, with retention projected beyond 10 years without memory collapse. At the system level, a 4 x 2 array achieves 100% accuracy in 2-pixel x 2-pixel pattern-recognition tasks, while scaling to a 16 x 4 array and letter-recognition tasks highlights the outstanding scalability of Fe-Cap-based IMC platforms. These results not only validate the Fe-Caps as both a functional and reliable IMC element but also provide an experimental framework for straightforward evaluation of IMC functionality, marking a milestone toward practical and energy-efficient neuromorphic hardware.

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