Electrical and optical activation studies of high dose Si-implanted Al0.18Ga0.82N

초록

Both electrical and optical activation studies of Si-implanted Al0.18Ga0.82N have been made as a function of anneal time and anneal temperature to obtain maximum possible electrical activation efficiency. Silicon ions were implanted at 200 keV with doses of 5 x 10(14) and 1 x 10(15) cm(-2), and the samples were annealed from 1100 to 1250 degrees C for 5-25 min with a 500 angstrom thick AlN cap in a nitrogen environment. The electrical activation efficiency and Hall mobility increase with anneal time and anneal temperature. Nearly 100 and 95% electrical activation efficiencies were obtained for Si-implanted Al0.18Ga0.82N with doses of 5 x 10(14) and 1 x 10(15) cm(-2) and annealing at 1250 and 1200 degrees C for 25 min, respectively. The photoluminescence measurements show an excellent implantation damage recovery after annealing at these optimum anneal conditions, showing a strong near band emission. These optical results correlate well with the electrical results. (c) 2006 Elsevier Ltd. All rights reserved.

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