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초록
The atomic structure of Co on the Si(001) (2 × 1) surface is investigated by coaxial impact collision ion scattering spectroscopy. When 0.6 ML Co atoms are deposited on the Si(001) at room temperature, the deposited Co atoms reside two-dimensionally on the Si(001) surface. The first preferential adsorption site is T4, and the next favorable site is HB, with a height of 2.72 Å and 3.47 Å from the second Si(001) layer, respectively. As the coverage increases up to 1.9 ML, Co atoms occupy the HB and T3 sites, of which the latter is at a height of 3.58 Å from the second layer of the Si(001) surface. © 2000 Elsevier Science B.V. All rights reserved.
키워드
Cobalt; Low energy ion scattering (LEIS); Silicon; Surface structure, morphology, roughness, and topography
- 제목
- Atomic structure of ultrathin Co layer on Si(001) (2 × 1) at room temperature
- 저자
- Cho, Won-seok; Kim, Jooyoung; Park, No-gill; Lyo, Inwhan; Jeong, Kwangho; Kim, Sung-soo; Choi, Daesun; Whang, Chungnam; Chae, Keun Hwa
- 발행일
- 2000
- 유형
- Article
- 저널명
- Surface Science
- 권
- 453
- 호
- 1-3
- 페이지
- L309 ~ L314