Annealing of recombination centers in the deposition and light induced high defect amorphous silicon

초록

We have studied the annealing behaviors of deposition and light induced recombination centers, as measured by steady-state photoconductivity, in undoped hydrogenated amorphous silicon. It was found that both annealing activation energies are identical, and of 1.1 eV. In addition, the annealing activation energies of 1.1 and 1.7 eV were found for dark conductivity recoveries in the deposition and light induced defect annealing, respectively. The results are discussed on the basis of the existing models for recombination centers.