Polycrystalline silicon film deposited by ICP-CVD

초록

We studied the deposition of polycrystalline silicon (poly-Si) using SiH4/SiH2Cl2/H-2 mixtures by inductively coupled plasma chemical vapor deposition. The deposition rate and crystalline quality were improved by increasing RF power. The poly-Si film deposited with the [SiH2Cl2]/[SiH4] ratio of 2 and the RF power of 1500 W exhibited the deposition rate of 4.2 Angstrom /s, the polycrystalline volume fraction of 88%, the Raman FWHM of 7cm(-1), and the TEM grain size of similar to 1200 Angstrom. The solar cell made of this material exhibited a conversion efficiency of 3.14%. (C) 2001 Elsevier Science B.V. All rights reserved.

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