Nearly Perfect Electrical Activation Efficiencies from Silicon-Implanted Al x Ga1-x N with High Aluminum Mole Fraction

초록

Electrical activation studies of Al (x) Ga1-x N (x = 0.45 and 0.51) implanted with Si for n-type conductivity have been made as a function of ion dose and anneal temperature. Silicon ions were implanted at 200 keV with doses ranging from 1 x 10(14) cm(-2) to 1 x 10(15) cm(-2) at room temperature. The samples were subsequently annealed from 1150A degrees C to 1350A degrees C for 20 min in a nitrogen environment. Nearly 100% electrical activation efficiency was successfully obtained for the Si-implanted Al0.45Ga0.55N samples after annealing at 1350A degrees C for doses of 1 x 10(14) cm(-2) and 5 x 10(14) cm(-2) and at 1200A degrees C for a dose of 1 x 10(15) cm(-2), and for the Al0.51Ga0.49N implanted with silicon doses of 1 x 10(14) cm(-2) and 5 x 10(14) cm(-2) after annealing at 1300A degrees C. The highest room-temperature mobility obtained was 61 cm(2)/V s and 55 cm(2)/V s for the low-dose implanted Al0.45Ga0.55N and Al0.51Ga0.49N, respectively, after annealing at 1350A degrees C for 20 min. These results show unprecedented activation efficiencies for Al (x) Ga1-x N with high Al mole fractions and provide suitable annealing conditions for Al (x) Ga1-x N-based device applications.

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