Intrinsic deep-defect-related recombination process in hydrogenated amorphous silicon

초록

Intrinsic deep-defect-related recombination process has been investigated in a series of undoped hydrogenated amorphous silicon (a-Si:H) films grown under different deposition conditions. Steady-state photoconductivity (ph) was measured as a function of deep-defect density Nd, Urbach energy Eu, and dark Fermi energy EF. It was found that ph strongly depends on these parameters while EF stays at the energy levels lower than 0.82 eV below Ec, but it is nearly independent of those if EF stays above 0.82 eV. A possible distribution of deep-defect-related recombination centers and recombination process has been suggested. © 1994 The American Physical Society.