Synthesis and charging properties of cobalt-based nanoparticles in silicon dioxide

초록

Cobalt silicide (CoSi) nanocrystal (NC) layer distributed within narrow spatial region is synthesized by thermal annealing of a sandwich structure comprised of a thin cobalt (Co) film sandwiched between two silicon-rich oxide (SiO<inf>x</inf>) layers. It is shown that the size of the CoSi NCs can be controlled by varying the Co film thickness and Si concentration, an increase in the size with increasing thickness and concentration. Capacitance-voltage (C-V) measurements on a test metal/oxide/semiconductor (MOS) structure with floating gate based on CoSi NCs of 3.8 nm in diameter and 1.4×1012 cm-2 in density are shown to have C-V characteristics suitable for nonvolatile memory applications, including a large C-V memory window of about 10 V for sweep voltages between -15 V and +8.

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