Effects of Hydrogen Treatments of Silicon Substrates on Pore Formation

초록

The effects of prehydrogenation of Si substrates on porous silicon formation have been investigated. Porous silicon layers were prepared by electrochemically anodizing Si substrates exposed to an atomic hydrogen plasma. Hydrogen exposure is shown to significantly suppress pore formation and to result in an increase in the photoluminescence (PL) intensity. A 90-min H exposure at 100 degrees C is shown to result in a reduction in pore density by a factor of 0.02 and a two-fold increase in PL intensity. These results arise from hydrogenation of the Si substrate by hydrogen exposure and support a suggestion that pore formation can be hindered by the existence of Si-H bonds.

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