Annealing behavior of Pd/GaN (0001) microstructure

Kim, CC; Je, JH; Kim, DW; Baik, HK; Lee, SM; Ruterana, P

doi:10.1016/S0921-5107(00)00761-3

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Annealing behavior of Pd/GaN (0001) microstructure

Kim, CC;
Je, JH;
Kim, DW;
Baik, HK;
Lee, SM;
외 1명

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WEB OF SCIENCE

12

Citations

SCOPUS

11

초록

We reveal the existence of interfacial, epitaxial, Pd grains in an as-deposited Pd film evaporated on GaN (0001) at room temperature. The origin of the Pd epitaxy was attributed to 6/7 matched interface structure. The Pd film was completely transformed to Ga,Pd, and Ga,Pd gallides in epitaxial relationships with GaN at an annealing temperature of 700 degreesC. (C) 2001 Elsevier Science B.V. All rights reserved.

키워드

Pd; gallide; microstructure; interfacial structure; epitaxy; GAN; CONTACT; PD

제목: Annealing behavior of Pd/GaN (0001) microstructure

저자: Kim, CC; Je, JH; Kim, DW; Baik, HK; Lee, SM; Ruterana, P

DOI: 10.1016/S0921-5107(00)00761-3

발행일: 2001-05-22

유형: Article; Proceedings Paper

저널명: Materials Science & Engineering B

권: 82

호: 1-3

페이지: 105 ~ 107