Implantation damage recovery and carrier activation studies of Si-implanted Al0.18Ga0.82N by temperature dependent Hall-effect measurements

초록

N-type activation studies of Si-implanted Al0.18Ga0.82N have been made as a function of anneal temperature and ion dose to obtain maximum possible activation efficiency. Nearly 100 and 95% electrical activation efficiencies were obtained for Si-implanted Al0.18Ga0.82N with doses of 5 x 10(14) and 1 x 10(15) cm(-2) and annealing at 1250 and 1200 degrees C for 25 min, respectively. The room temperature sheet resistivity decreases from 528 to 196 Omega/square with increasing anneal temperature from 1150 to 1250 degrees C for a dose of 5 x 10(14) cm(-2). Both sheet carrier concentration (activation efficiency) and mobility increase with anneal temperature, indicating an improved implantation damage recovery with anneal temperature. (C) 2007 WILEY-VCH Vertag GmbH & Co. KGaA, Weinheim.

키워드