Growth of crystalline grains in microcrystalline silicon films

초록

Growth of crystalline grains has been studied using atomic hydrogen plasma exposure on thick(similar to 190 nm) microcrystalline silicon films (mu c-Si:H) with a low crystalline volume fraction (similar to 7%). Raman spectra reveal that the intensity near 520 cm(-1) increases after hydrogen exposure. Cross-sectional transmission electron micrographs of mu c-Si:H films exposed to atomic hydrogen show the growth of crystalline grains extending from surface to bulk, approximately 100 nm. These results suggest that crystal formation in mu c-Si:H films is likely to be caused by chemical annealing.

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