ULTRATHIN Al FILM ON THE W(100) SURFACE

  • Choi, D. S.
  • Kim, D. H.
Citations

WEB OF SCIENCE

4
Citations

SCOPUS

3

초록

We have investigated Al adsorption on the W(100) surface using LEED and low energy Ion Scattering Spectroscopy (ISS). We observe a p(2 x 1) double domain LEED image for the 1.0 ML Al/W(100) surface at annealing temperature 850 degrees C. We also measured the Al adsorption site at the Al/W(100)-p(2 x 1) surface using ISS. It is found that Al atoms adsorbed at 0.7 +/- 0.1 angstrom aside from the center of the bridge sites with a zigzag structure-one atom adsorbs at the right-hand side and next atom at the left-hand side along the [100] direction. The height of the adsorbed Al atoms is determined to be 1.75 +/- 0.15 angstrom above the Wsurface layer.

키워드

Low energy ion scatteringW(100)Alsurface structureadsorption siteENERGY ION-SCATTERINGSI(001) SURFACEADSORPTIONGROWTHOXYGENDIFFUSIONW(110)
제목
ULTRATHIN Al FILM ON THE W(100) SURFACE
저자
Choi, D. S.Kim, D. H.
DOI
10.1142/S0217984909019090
발행일
2009-03-10
유형
Article
저널명
Modern Physics Letters B
23
6
페이지
835 ~ 847