Ferroelectric polarization retention with scaling of Hf0.5Zr0.5O2 on silicon

초록

In this paper, we investigate the polarization retention of Hf0.5Zr0.5O2 (HZO)-based metal-ferroelectric-insulator-Si (MFIS) capacitors with scaling of the ferroelectric (FE) layer thickness from 5nm to 20nm. The capacitors have a constant interface layer capacitance of similar to 24 mu F/cm(2), developed due to the integration of HZO on a degenerated Si as a bottom conducting electrode. It is observed that 20nm HZO films show a small change (similar to 5%) in FE polarization (P-FE) between short (10 mu s) and long (6 s) retention time, while 5-nm-thick films exhibit a large difference (similar to 90%). The dependence of P-FE retention loss on the FE thickness can be understood by the presence of a built-in electric field in the FE layer, generated due to charge continuity between the FE and the interface layers in the ground state without any external bias. A direct experimental observation also confirms that a residual voltage is developed at the node between the metal-ferroelectric-metal and metal-oxide-semiconductor capacitors connected in series, in the ground state with zero external bias. It is expected that a proper understanding of the built-in field developed in the FE layer in an MFIS stack is crucial for FE memory retention characteristics.