Saturation behavior of the defect density in hydrogenated amorphous silicon by continuous and pulsed light illumination

초록

Measurements of the saturated defect density in hydrogenated amorphous silicon by continuous and pulsed light illumination are reported. It is observed that the saturation value of the defect density by pulsed light illumination is about one order of magnitude higher than by continuous light illumination in device quality films. It has been suggested that this result would be due to the difference in the light-induced defect annealing rate between two cases, in which it is found that the light-induced annealing rate by pulsed light is lower than by continuous light with a similar intensity.© 1995 American Institute of Physics.