Improved thermal stability of Ni silicide on Si (100) through reactive deposition of Ni

Kim, Gi-bum; Yoo, Do-joon; Baik, Hongkoo; Myoung, Jaemin; Lee, Sung-man; Oh, Sangho; Park, Changyung

doi:10.1116/1.1539064

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Improved thermal stability of Ni silicide on Si (100) through reactive deposition of Ni

Kim, Gi-bum;
Yoo, Do-joon;
Baik, Hongkoo;
Myoung, Jaemin;
Lee, Sung-man;
외 2명

Citations

SCOPUS

24

초록

The thermal stability of Ni silicide was improved using the reactive deposition of Ni metal. This improvement was attributed to the formation of epitaxial NiSi<inf>2</inf> film and double layer structure in the as-deposited state.

제목: Improved thermal stability of Ni silicide on Si (100) through reactive deposition of Ni

저자: Kim, Gi-bum; Yoo, Do-joon; Baik, Hongkoo; Myoung, Jaemin; Lee, Sung-man; Oh, Sangho; Park, Changyung

DOI: 10.1116/1.1539064

발행일: 2003

유형: Article

저널명: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

권: 21

호: 1 SPEC.

페이지: 319 ~ 322