Effects of Ga Contents on Structural and Electrical Properties in Cu(In,Ga)Se2 Thin Film Solar Cell

초록

CIGS thin-film was prepared on a substrate coated with Mo thin-films on soda-lime glass by using a three stage co-evaporation method. The changes in the structural and electrical of properties of CIGS thin-films were analyzed with different Ga contents. Furthermore, electric current voltage measurements were taken for the CIGS thin-film solar cells. As the Ga/(In + Ga) ratio increases, the grain sizes decreases. We were obtained lowest resistivity of 1.02 Omega cm at Ga composition of 0.33. As also the Ga composition increases, the shape of the particle was grown into chalcopyrite structured triangle form saturation current is decreased in the quasi-neutral region. As these results, the efficiency increased to 13.61% as the Ga/(In + Ga) ratio increased to 0.33.

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