Energy level alignments at tris(8-hydroquinoline) aluminum/8-hydroquinolatolithium/aluminum interfaces

  • Cho, Kwanghee
  • Cho, Sang Wan
  • Jeon, Pyung Eun
  • Lee, Hyunbok
  • Whang, Chung-Nam
  • 외 3명
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초록

The electronic structures of tris(8-hydroquinoline) aluminum (Alq(3))/8-hydroquinolatolithium (Liq)/Al interfaces were studied using in situ ultraviolet and x-ray photoelectron spectroscopy. We constructed complete energy level diagrams and analyzed chemical interactions at the interface. When Liq was inserted between Al and Alq(3), the electron injection barrier was reduced by 0.56 eV compared to the structure without Liq. Additionally, a gap state was observed in the gap of Liq, which is related to an interfacial reaction. The N 1s spectra revealed that there were destructive chemical reactions between Alq(3) and Al, which could be prevented by inserting Liq between them. (c) 2008 American Institute of Physics.

키워드

LIGHT-EMITTING DEVICESHOLE TRANSPORT LAYERSELECTRON INJECTIONALUMINUM INTERFACESDIODESEFFICIENCYENHANCEMENTLITHIUMALQ(3)STATES
제목
Energy level alignments at tris(8-hydroquinoline) aluminum/8-hydroquinolatolithium/aluminum interfaces
저자
Cho, KwangheeCho, Sang WanJeon, Pyung EunLee, HyunbokWhang, Chung-NamJeong, KwanghoKang, Seong JunYi, Yeonjin
DOI
10.1063/1.2890163
발행일
2008-03-03
유형
Article
저널명
Applied Physics Letters
92
9