Geometrical surface structure of ultra thin Al film on the W(110) surface

  • Choi, D. S.
  • Kim, D. H.
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초록

Using low energy electron diffraction (LEED) and low energy ion scattering spectroscopy (ISS) we investigated the structure of the surface of 1.0 monolayer (ML) Al/W(110) prepared by annealing at 900 K. A p(1x1) LEED image was acquired for the 1.0 ML Al/W(110) surface while the substrate temperature was maintained at 900 K during Al deposition. We found that, 1.0 ML Al atoms cover the W(110) surface uniformly, and do not form three-dimensional islands. We also measured the Al adsorption site at the 1.0 ML Al/W(110) surface using ISS. The ISS results show that the 1.0 ML Al/W(110) surface prepared by annealing at 900 K has two domains with a p(1x1) structure. The experiments reveal that the Al atoms were adsorbed at the centers of the hollow sites and are located +/- 0.55 angstrom to the [1 10] side, and the adsorption height was 2.13 angstrom above the W surface. (C) 2011 Elsevier B.V. All rights reserved.

키워드

Low energy ion scattering spectroscopyW(110)AluminumSurface structureAdsorption siteENERGY ION-SCATTERINGSI(001) SURFACEDIFFUSION
제목
Geometrical surface structure of ultra thin Al film on the W(110) surface
저자
Choi, D. S.Kim, D. H.
DOI
10.1016/j.tsf.2011.08.059
발행일
2011-11-30
유형
Article; Proceedings Paper
저널명
Thin Solid Films
520
3
페이지
1057 ~ 1062