Numerical analysis on particle growth in pulsed SiH4 plasma process by discrete-sectiona method

초록

Particle growth by coagulation between particles in a pulsed SiH4 plasma reactor was analyzed by using a discrete-sectional method. At the start of the plasma discharge, there is a high concentration of small-sized particles and, later, large-sized particles appear and grow by coagulation between small-sized particles. During plasma-off, monomer generation stops and the particle concentration decreases with time due to the effects of particle coagulation and fluid flow. The large-sized particles grow more quickly by coagulation with small-sized particles during ton than during toff because the concentration of small-sized particles is higher during ton. This analysis shows that the ratio of residence time to toff can be the main variable for controlling particle growth in the pulsed plasma process. This study proves that the pulsed plasma process can be applied to suppress particle contamination in the plasma chemical vapor deposition process.

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