Room temperature ferromagnetic properties of transition metal implanted Al0.35Ga0.65N

  • Raley, Jeremy A.
  • Yeo, Yung Kee
  • Hengehold, Robert L.
  • Ryu, Mee-Yi
  • Steiner, Todd D.
Citations

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6
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7

초록

A nominally undoped MBE-grown Al0.35Ga0.65N thin film was implanted with Cr, Mn, and Ni with an energy of 200 keV to a dose of 5 x 1016 cm(-2) for Cr and Mn and to a dose of 3 x 1016 cm(-2) for Ni. The magnetic properties of these samples were measured using a superconducting quantum interference device (SQUID) magnetometer. The Cr-implanted Al0.35Ga0.65N annealed at 750 degrees C has a coercive field (H-C) of 178 Oe at 300 K, and field-cooled (FC) and zero-field-cooled (ZFC) magnetization measurements show evidence of ferromagnetism in this sample with an estimated Curie temperature of around 350 K. The Mn-implanted sample has an H-C of 180 Oe at 300 K after annealing at 750 degrees C for 5 min, which indicates a dominant ferromagnetic phase. The Ni-implanted Al0.35Ga0.65N produces clear ferromagnetic hysteresis at temperatures up to 350 K. FC-ZFC magnetization separation suggests the true presence of ferromagnetism in this material. (c) 2006 Published by Elsevier B.V.

키워드

magnetic films and multilayerssemiconductorsimpurities in semiconductorsmagnetic measurementsMAGNETIC SEMICONDUCTORSGAN
제목
Room temperature ferromagnetic properties of transition metal implanted Al0.35Ga0.65N
저자
Raley, Jeremy A.Yeo, Yung KeeHengehold, Robert L.Ryu, Mee-YiSteiner, Todd D.
DOI
10.1016/j.jallcom.2005.12.107
발행일
2006-10-26
유형
Article; Proceedings Paper
저널명
Journal of Alloys and Compounds
423
1-2
페이지
184 ~ 187