Electrical properties of Pd-based ohmic contact to p-GaN

초록

The room-temperature ohmic behavior of palladium-based ohmic contact to p-GaN grown by metallorganic chemical vapor deposition (MOCVD) was investigated. Metal contact systems were deposited and current-voltage measurements were performed to examine room-temperature ohmic behavior. Good ohmic characteristics were shown by palladium-based contacts before annealing. The Schottky barrier height of the Pd/p-GaN was measured to be 0.47 eV.