Parallel-Conduction-Based Thermoelectric Responses in Chemical Vapor Deposition Grown Twisted Bilayer Graphene

Citations

WEB OF SCIENCE

1
Citations

SCOPUS

1

초록

We report parallel-conduction-based thermoelectric responses in chemical vapor deposition grown hexagonal twisted bilayer graphene. We observe that two independent graphene layers form various transfer characteristics in terms of layer-asymmetric charge distribution, which can be understood by a two parallel conductor model. The thermoelectric responses exhibit distinct behavior from single systems of graphene layers, which can be explained by a two band model due to the parallel conduction. Based on the charge transport mechanism, specific transfer characteristic is demonstrated by asymmetrically tuning charge-carrier distribution between graphene layers by polymer-based dual-gate configuration.

키워드

CVD-grown grapheneTwisted bilayer grapheneParallel conductionThermoelectric responseTwo band modelTRILAYER GRAPHENEDIRAC FERMIONSBAND-GAPTRANSPORTABC
제목
Parallel-Conduction-Based Thermoelectric Responses in Chemical Vapor Deposition Grown Twisted Bilayer Graphene
저자
Hong, Sung Ju
DOI
10.1007/s13391-025-00595-3
발행일
2025-11
유형
Article
저널명
Electronic Materials Letters
21
6
페이지
784 ~ 789