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Parallel-Conduction-Based Thermoelectric Responses in Chemical Vapor Deposition Grown Twisted Bilayer Graphene
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1초록
We report parallel-conduction-based thermoelectric responses in chemical vapor deposition grown hexagonal twisted bilayer graphene. We observe that two independent graphene layers form various transfer characteristics in terms of layer-asymmetric charge distribution, which can be understood by a two parallel conductor model. The thermoelectric responses exhibit distinct behavior from single systems of graphene layers, which can be explained by a two band model due to the parallel conduction. Based on the charge transport mechanism, specific transfer characteristic is demonstrated by asymmetrically tuning charge-carrier distribution between graphene layers by polymer-based dual-gate configuration.
키워드
CVD-grown graphene; Twisted bilayer graphene; Parallel conduction; Thermoelectric response; Two band model; TRILAYER GRAPHENE; DIRAC FERMIONS; BAND-GAP; TRANSPORT; ABC
- 제목
- Parallel-Conduction-Based Thermoelectric Responses in Chemical Vapor Deposition Grown Twisted Bilayer Graphene
- 저자
- Hong, Sung Ju
- 발행일
- 2025-11
- 유형
- Article
- 권
- 21
- 호
- 6
- 페이지
- 784 ~ 789