Mg-ion irradiation of SnO2nanowires for enhanced H2S gas sensing

초록

SnO<inf>2</inf>nanowires (NWs) were synthesized via a vapor–liquid–solid growth mechanism and subsequently irradiated with varying Mg-ion doses (1014and 1016ions/cm2). At a low dose of 1014ions/cm2, Mg2+ions substitute for Sn4+ions, leading to an increase in oxygen vacancies. In contrast, at a high dose of 1016ions/cm2, Mg2+can no longer substitute for Sn4+; instead, SnO<inf>2</inf>NWs change from single-crystalline to poly-crystalline. According to the dihydrogen sulfide (H<inf>2</inf>S) gas-sensing results, the pristine SnO<inf>2</inf>NWs exhibited a response of 1.38–2 ppm of H<inf>2</inf>S at 300 °C. In contrast, the low-dose-irradiated sensor achieved its highest response of 1.60–2 ppm of H<inf>2</inf>S at 100 °C. However, the high-dose-irradiated sensor showed no response at 100 °C, and its maximum response of 1.02 occurred at 300 °C under the same gas conditions. This study underscores the potential of Mg irradiation to improve the sensing performance of SnO<inf>2</inf>NWs, offering insights that may be extended to other similar systems. © 2025 Elsevier Ltd and Techna Group S.r.l. All rights are reserved, including those for text and data mining, AI training, and similar technologies.

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