A Study of Pore Formation of AAO Film on Si Substrate with Optimizing Process

초록

AAO films were fabricated on two kinds of substrates such as Al/SiO₂/Si and Al/Ni/Ti/Si. To obtain well-aligned AAO film, we optimized process condition for buffer layer, electrolyte and voltage. In the case of oxalic acid, the AAO film with pore size of approximately 45 ㎚ was obtained at voltage of 40 V, temperature of 10 ℃, oxalic acid of 0.3 M and widening time of 60 min. Then the thickness of barrier is less than 600 ㎚. In the case of sulfuric acid, the AAO film has pore size of 40 ㎚ and barrier thickness of 400 ㎚ with optimum conditions such as voltage of 25 V, temperature of 8 ℃, sulfuric acid of 0.3 M and widening time of 60 min.

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