Radiation-induced electron traps in Al0.14Ga0.86N by 1 MeV electron radiation - art. no. 261906

초록

Electrical properties of defects induced in n-type molecular-beam-epitaxial-grown Al0.14Ga0.86N are studied using deep-level transient spectroscopy (DLTS) to explore the radiation tolerance of AlGaN-based electronic and optoelectronic devices. It has been found that four electron traps labeled R1 (0.15 +/- 0.02 eV), R2 (0.21 +/- 0.02 eV), R3 (0.26 +/- 0.02 eV), and R4 (0.33 +/- 0.03 eV) are created in the electron irradiated Al0.14Ga0.86N. The electron trap R4 is the most prominent radiation-induced defect in the DLTS spectrum and appears to be unique to AlGaN. Although the other radiation-induced traps anneal significantly at or below 400 K, this R4 trap is thermally stable up to 450 K, and could significantly affect the performance of AlGaN-based devices.

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