Light-induced recombination centers in hydrogenated amorphous silicon-sulfur alloys

초록

Light-induced degradation in photoconductivity, photoluminescence, electron spin resonance (ESR), and subgap optical absorption has been performed on a sample of hydrogenated amorphous silicon-sulfur (a-SiSx:H) with x similar to 0.02. After light soaking of this sample, there are no changes, within errors of measurement, in (1) the power exponent, gamma, for the intensity dependence of the photoconductivity, (2) the intensity of the defect luminescence near 0.8 eV, and (3) the dark ESR signal. However, the deep defect density, as inferred from subgap optical absorption, increases with light soaking. (C) 1998 Elsevier Science B.V. All rights reserved.

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