Low-temperature sintering and dielectric properties of the Bi(Nb1-x Ta x )O4 system

초록

Low-temperature sintering and dielectric properties of the Bi(Nb1-x Ta (x) )O-4 (x = 0.1, 0.3, and 0.5) system was investigated as a function of the zinc borosilicate (ZBS) glass content with a view to applying this system to LTCC technology. The addition of 7 wt% ZBS glass ensured a successful sintering below 900A degrees C. The complete solid solution of Bi(Nb, Ta)O-4 with an orthorhombic structure was formed and the high temperature form of Bi(Nb, Ta)O-4 with a triclinic structure was not observed. The second phase of Bi2SiO5 was observed for all compositions. The non-relative liquid phase sintering (NLPS) occurred and the one-stage sintering was conducted. The Q x f values were improved by the addition of Ta. Bi(Nb0.7Ta0.3)O-4 with 7 wt% ZBS glass sintered at 900A degrees C demonstrated 35.8 in the dielectric constant (E > (r)), 2,200 GHz in the quality factor (Q x f (0)), and -48 ppm/A degrees C in the temperature coefficient of resonant frequency (tau (f)).

키워드