Low temperature growth of silicon oxide thin film by in-direct contacting process with photocatalytic TiO2 layer on fused silica

초록

The possibility of silicon oxidation through the aerial-diffusion of active oxygen species has been evaluated. The species originate from the surface of TiO<inf>2</inf> exposed by UV. Among process parameters such as UV intensity, substrate temperature and chamber pressure with oxygen, UV intensity was a major parameter to the influence on the oxide growth rate. When 1 kW high pressure Hg lamp was used as a UV source, the growth rate of silicon oxide was 8 times as faster as that of a 60 W BLB lamp. However, as the chamber pressure increased, the growth rate was declined due to the suppression of aerial diffusion of active oxygen species. According to the results, it could be confirmed that the aerial-diffusion of active oxygen species from UV-irradiated photocatalytic surface can be applied to a new method for preparing an ultra-thin silicon oxide at the range of relatively low temperature.

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