Intrinsic microcrystalline silicon by post-growth atomic hydrogen exposure

초록

In this work, it is reported that microcrystalline silicon (mu c-Si:H) of a truly intrinsic character can be achieved when exposed to atomic hydrogen plasma after deposition. The initial dark conductivity activation energy of 0.47 eV is observed to decrease down to 0.13 eV, and then to increase with exposure time to a saturation value of about 0.57 eV, similar to that observed in truly intrinsic mu c-Si:H films. For the saturated state, a dark conductivity of the order of 10(-7) S/cm is obtained, and there is no significant change in the microstructure before and after hydrogen exposure. A possible explanation is given for these results.

키워드