Electrical Activation Studies of Silicon-Implanted AlxGa1-xN with Aluminum Mole Fraction of 11% to 51%

초록

Electrical activation studies of Si-implanted AlxGa1-xN with an Al mole fraction of 11% to 51% have been carried out as a function of ion dose and annealing temperature. The AlxGa1-xN samples were implanted at room temperature with Si ions at 200 keV in doses ranging from 1 x 10(14) cm(-2) to 1 x 10(15) cm(-2), and subsequently annealed from 1100 degrees C to 1350 degrees C for 20 min in a nitrogen environment. The maximum electrical activation efficiencies for the AlxGa1-xN samples with an Al mole fraction less than 40% were obtained for samples implanted with the highest Si dose of 1 9 10 15 cm(-2). On the other hand, for the AlxGa1-xN samples with an Al mole fraction more than 40%, nearly perfect activation efficiencies of 99% and 100% were obtained for the samples implanted with the lowest Si dose of 1 x 10(14) cm(-2). The mobility of the Si-implanted AlxGa1-xN samples increased with increasing annealing temperature in spite of the increased number of ionized donors and thus increased impurity scattering, indicating that a greater amount of lattice damage is being repaired with each successive increase in annealing temperature. These results provide suitable annealing conditions for Si-implanted AlxGa1-xN-based devices with an Al mole fraction from 11% to 51%.

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