Effect of Hydrogen Doping on the Gate-Tunable Memristive Behavior of Zinc Oxide Films with and without F or N Doping

초록

Three-terminal memristor devices with a channel length of 70 mu m and a width of 5 mu m are fabricated using undoped zinc oxide (ZnO), fluorine-doped zinc oxide (ZnO:F), and nitrogen-doped zinc oxide (ZnO:N) semiconductor thin films via atomic layer deposition. To observe the effects of humidity and hydrogen doping on their gate-tunable memristive behavior, gate-tunable memristive behaviors are measured with a drain bias (V-D) +/- 10 V at different gate voltages (V-G) from 50 to -50 V under humidity of 40%, 55%, and 70%. Resistive switching behavior caused by the hydrogen doping effect is observed, and the on/off ratio increases with increasing humidity, whereas the gate tunability decreases. The conductance and gate tunability of all devices decrease with an increase in humidity due to the hydrogen doping effect. As this study adopts a three-terminal structure with an oxide memristor, it clearly shows the moisture effect on the memristive behavior of oxide-based memristors.

키워드