Ni-Catalyzed Growth of Silica Nanowires From Amorphous Silicon Films and Growth Mechanism

초록

The fabrication of amorphous silica nanowires (NWs) using an amorphous silicon (a-Si) film grown by plasma-enhanced chemical vapor deposition is demonstrated. Fabrication is achieved by conventional high-temperature annealing of an a-Si layer coated with a thin Ni film. Annealing of the Ni (approximate to 20nm)/a-Si (approximate to 1m) structure at 1100 degrees C for 1h is shown to clearly result in the formation of densely packed amorphous silica NWs with diameters in the range from 35 to 70nm. A comparison of energy dispersive X-ray analyses on the tip and body of an NW demonstrates that NW growth proceeded via the solid-liquid-solid mechanism.

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