Surface structure of low-coveraged Cs on Si(001)-(2 x 1) system

Park, JY; Seo, JH; Kim, JY; Whang, CN; Kim, SS; Choi, DS; Chae, KH

doi:10.1016/j.apsusc.2004.06.144

상세 보기

Surface structure of low-coveraged Cs on Si(001)-(2 x 1) system

Park, JY;
Seo, JH;
Kim, JY;
Whang, CN;
Kim, SS;
외 2명

Citations

WEB OF SCIENCE

9

Citations

SCOPUS

9

초록

Alkali metals (AM) on semiconductors have been investigated as a simple model system for the metal-semiconductor interfaces due to their simple electronic structures. Especially, cesium (Cs) on Si(0 0 1) surface has been studied with various experimental techniques. In this study, we investigated the atomic structure of initial Cs adsorption on Si(0 0 1)-(2 x 1) surface using coaxial impact collision ion scattering spectroscopy. When Cs atoms are adsorbed on Si(0 0 1)-(2 x 1) up to 0-2 ML at room temperature, the initial adsorption site is on-top T3 site with poor periodicity and the length of Si dimer is reserved as in the clean Si(0 0 1) surface. It is also found that Cs atoms adsorbed on Si(0 0 1) surface with a height of 2.83 +/- 0.05 Angstrom from the second layer of Si(0 0 1) surface. (C) 2004 Elsevier B.V. All rights reserved.

키워드

surface structure; morphology; roughness and topography; silicon; cesium; alkali metals; low energy ion scattering (LEIS); ENERGY ELECTRON-DIFFRACTION; PHOTOELECTRON DIFFRACTION; SI(100)2X1; ADSORPTION; SCATTERING; CESIUM

제목: Surface structure of low-coveraged Cs on Si(001)-(2 x 1) system

저자: Park, JY; Seo, JH; Kim, JY; Whang, CN; Kim, SS; Choi, DS; Chae, KH

DOI: 10.1016/j.apsusc.2004.06.144

발행일: 2005-02-15

유형: Article

저널명: Applied Surface Science

권: 240

호: 1-4

페이지: 305 ~ 311