360-μW 4.1-dB NF CMOS MedRadio receiver RF front-end with current-reuse Q-boosted resistive feedback LNA for biomedical IoT applications

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초록

In this paper, a low-power low-noise complementary metal-oxide semiconductor (CMOS) receiver RF front-end (RFFE) that employs a current-reuse Q-boosted resistive feedback low-noise amplifier (RFLNA) is proposed for 401 to 406 MHz medical device radio-communication service band IoT applications. By employing a series RLC input matching network, the proposed RFLNA has the advantages of both the conventional RFLNA and the inductively degenerated common-source LNA without using large on-chip spiral inductors at the sources of the main transistors. The proposed active mixer utilizes a current-reuse transconductor, in which a p-channel metal-oxide semiconductor (PMOS) transistor performs a current-bleeding function to reduce direct current (DC) and flicker noise in the switching stage of the active mixer. The proposed receiver RFFE is implemented in a 65-nm CMOS process and achieves a voltage gain of 30.9 dB, noise figure of 4.1 dB, S11 of less than -10 dB, and IIP3 of -22.9 dBm. It operates at a supply voltage of 1 V with bias currents of 360 mu A. The active die area is 0.4 mm x 0.35 mm.

키워드

biomedicalCMOScurrent-reuseimplantIoTlow-noise amplifierMedRadioMICSmixerQ-factorreceiverresistive feedback LNAseries RLC matching
제목
360-μW 4.1-dB NF CMOS MedRadio receiver RF front-end with current-reuse Q-boosted resistive feedback LNA for biomedical IoT applications
저자
Kim, TaejongIm, DongguKwon, Kuduck
DOI
10.1002/cta.2772
발행일
2020-04
유형
Article
저널명
International Journal of Circuit Theory and Applications
48
4
페이지
502 ~ 511