Relaxation of Si dimer on the Si(001) surface induced by Pt adsorption

초록

The surface structure of Pt/Si(001) has been studied using LEED and Low Energy Ion Scattering Spectroscopy (ISS). We find that the Pt coverages are saturated at 0.25 ML after annealing regardless of the initial coverages between 0.5 ∼ 1.0 ML. We observe a c(4 × 2) image after annealing the Pt/Si(001) sample at 700°C and a clean c(4 × 6) image mixed with a clean c(4 × 2) image at annealing temperatures around 900°C. We find the structure of the Si(001) surface is changed due to Pt adsorption. The changed Si(001) surface still has the p(2 × 1) structure with increasing dimer length 0.6 Å.