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Manipulation of electrical properties in CVD-grown twisted bilayer graphene induced by dissociative hydrogen adsorption
- Hong, Sung Ju;
- Park, Min;
- Kang, Hojin;
- Lee, Minwoo;
- Soler-Delgado, David;
- 외 3명
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7초록
We report hydrogen adsorption on twisted bilayer graphene (tBLG). Raman spectroscopy and the electrical transport properties (electrical resistance and thermoelectric power) confirm the electron doping by hydrogen adsorption, in agreement with the previous report involving exfoliated bilayer graphene (BLG). Common electron doping behaviors were observed at various twist angles (0 degrees, 5 degrees, 12.5 degrees, and 30 degrees), and the adsorptions follow the first-order Langmuir-type adsorption model. Specifically, we analyzed the off-state currents, with band-gap openings of around 13 meV in tBLG with twist angle of 0 degrees, as in Bernal-stacked BLG. (C) 2016 Elsevier B.V. All rights reserved.
키워드
Hydrogenation; Twisted bilayer graphene; First-order adsorption; Electron doping; Band-gap opening; CHEMICAL-VAPOR-DEPOSITION; MASSLESS DIRAC FERMIONS; ROOM-TEMPERATURE; BANDGAP; SUPERLATTICES
- 제목
- Manipulation of electrical properties in CVD-grown twisted bilayer graphene induced by dissociative hydrogen adsorption
- 저자
- Hong, Sung Ju; Park, Min; Kang, Hojin; Lee, Minwoo; Soler-Delgado, David; Jeong, Dae Hong; Park, Yung Woo; Kim, Byung Hoon
- 발행일
- 2016-12
- 유형
- Article
- 권
- 16
- 호
- 12
- 페이지
- 1637 ~ 1641
- 언어
- ENG
- 출판사
- ELSEVIER SCIENCE BV
- 발행국가
- 네덜란드
- 분량
- 5 페이지
- ISSN
- E 1878-1675
P 1567-1739