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초록
We report an enhancement of the thermoelectric figure of merit in polycrystalline In- and Ga-doped Bi0.4Sb1.6Te3 compounds. Via the controlled doping of In or Ga, the lattice thermal conductivity was effectively reduced by strong point-defect phonon scattering while the power factor was not significantly changed due to the similarity of the density of states near the valence-band maximum between undoped and In- or Ga-doped compositions. An enhanced ZT of 1.2 at 320 K was obtained in 0.5 at.% In-doped Bi0.4Sb1.6Te3 compound by these synergetic effects.
키워드
Thermoelectric; Bi0.4Sb1.6Te3; lattice thermal conductivity; point defect; power factor; AUGMENTED-WAVE METHOD
- 제목
- Enhancement of the Thermoelectric Performance of Bi0.4Sb1.6Te3 Alloys by In and Ga Doping
- 저자
- Lee, Kyu-Hyoung; Hwang, Sungwoo; Ryu, Byungki; Ahn, Kyunghan; Roh, Jongwook; Yang, Daejin; Lee, Sang-Mock; Kim, Hyunsik; Kim, Sang-Il
- 발행일
- 2013-07
- 유형
- Article
- 권
- 42
- 호
- 7
- 페이지
- 1617 ~ 1621