Fabrication of polycrystalline silicon films by Al-induced crystallization of silicon-rich oxide films

초록

Polycrystalline silicon (poly-Si) films were fabricated by aluminum (Al)-induced crystallization of Si-rich oxide (SiOx) films. The fabrication was achieved by thermal annealing of SiOx/Al bilayers below the eutectic temperature of the Al-Si alloy. The poly-Si film resulting from SiO1.45 exhibited good crystallinity with highly preferential (111) orientation, as deduced from Raman scattering, X-ray diffraction, and transmission electron microscopy measurements. The poly-Si film is probably formed by the Al-induced layer exchange mechanism, which is mediated by Al oxide. (C) 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

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