Improved Hole Injection at the Zinc Phthalocyanine/Solution-Processed Graphene Interface via Ultraviolet-Ozone Treatment

초록

Solution-processed graphene represents a promising approach for large-area electronic applications. In particular, graphene dispersion in water (GDW) offers a key advantage, as it can be deposited without the use of chemical additives or toxic solvents. Consequently, GDW films have strong potential as efficient and environmentally friendly electrode materials for flexible electronic devices. Despite this potential, interfacial interactions between GDW and organic semiconductors have not been thoroughly explored. In this work, we systematically investigated the energy-level alignment between GDW and the p-type organic semiconductor zinc phthalocyanine (ZnPc) using in-situ X-ray and ultraviolet photoelectron spectroscopy. Furthermore, we compared the hole injection barriers of GDW/ZnPc and ultraviolet-ozone (UV-O3)-treated GDW/ZnPc. The UV-O3 treatment increased the work function from 5.03 to 5.31 eV, leading to a corresponding reduction in the hole injection from 0.51 to 0.28 eV, highlighting the effectiveness of surface modification in improving charge injection characteristics.

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