Atomic structure and growth mode of Co on Si(001)-(2x1)

Cho, WS; Park, NG; Kim, JY; Chae, KH; Whang, CN; Kim, SS; Choi, DS

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Atomic structure and growth mode of Co on Si(001)-(2x1)

Cho, WS;
Park, NG;
Kim, JY;
Chae, KH;
Whang, CN;
외 2명

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초록

The atomic structure and the growth mode of Co on Si(001)-(2x1) surface have been studied by coaxial impact collision ion scattering spectroscopy (CAICISS). When 0.6 ML Co atoms are deposited on Si(001) at room temperature, the deposited Co atoms reside two dimensionally on the Si(001) surface. The first preferential site of adsorption is the T4 site with a height of 2.72 Angstrom from the second Si(001) layer and is separated by 7.68 Angstrom across the Si dimer row. The next favorable site is the HB site with a height of 3.47 Angstrom from the second Si(001) layer.

키워드

SCANNING-TUNNELING-MICROSCOPY; THIN COSI2 FILMS; SI(100); SURFACE; NUCLEATION; CRYSTAL; SI

제목: Atomic structure and growth mode of Co on Si(001)-(2x1)

저자: Cho, WS; Park, NG; Kim, JY; Chae, KH; Whang, CN; Kim, SS; Choi, DS

발행일: 1999-07

유형: Article; Proceedings Paper

저널명: Journal of the Korean Physical Society

권: 35

페이지: S537 ~ S540